NIMTE OpenIR  > 2018专题
Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing
Lu, Ziyu; Zhang, Sheng; Sheng, Jiang; Gao, Pingqi; Chen, Qixian; Peng, Zhijian; Wu, Sudong; Ye, Jichun
2018
发表期刊JOURNAL OF CRYSTAL GROWTH
卷号486页码:142-147
摘要A rapid and low temperature crystallization of amorphous silicon (a-Si) films by Ar-H-2 mesoplasma annealing is demonstrated. The high thermal kinetic energy of mesoplasma leads to the fast crystallization process and a nanocrystalline Si film with a high crystalline fraction can be obtained within a few seconds at a temperature less than 600 degrees C. The atomic H in mesoplasma environment with a high number density enhances the crystallization process through an H diffusion-induced chemical annealing apart from the thermal effect. The recrystallization process of a-Si film by mesoplasma annealing is demonstrated. (C) 2018 Elsevier B.V. All rights reserved.
关键词Chemical-vapor-deposition High-rate Epitaxy Thermal-conductivity Plasma-jet Si Films Pressure Cvd
学科领域Crystallography ; Materials Science ; Physics
语种英语
文献类型期刊论文
条目标识符http://ir.nimte.ac.cn/handle/174433/16758
专题2018专题
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GB/T 7714
Lu, Ziyu,Zhang, Sheng,Sheng, Jiang,et al. Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing[J]. JOURNAL OF CRYSTAL GROWTH,2018,486:142-147.
APA Lu, Ziyu.,Zhang, Sheng.,Sheng, Jiang.,Gao, Pingqi.,Chen, Qixian.,...&Ye, Jichun.(2018).Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing.JOURNAL OF CRYSTAL GROWTH,486,142-147.
MLA Lu, Ziyu,et al."Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing".JOURNAL OF CRYSTAL GROWTH 486(2018):142-147.
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