NIMTE OpenIR  > 2018专题
Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing
Lu, Ziyu; Zhang, Sheng; Sheng, Jiang; Gao, Pingqi; Chen, Qixian; Peng, Zhijian; Wu, Sudong; Ye, Jichun
2018
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume486Pages:142-147
AbstractA rapid and low temperature crystallization of amorphous silicon (a-Si) films by Ar-H-2 mesoplasma annealing is demonstrated. The high thermal kinetic energy of mesoplasma leads to the fast crystallization process and a nanocrystalline Si film with a high crystalline fraction can be obtained within a few seconds at a temperature less than 600 degrees C. The atomic H in mesoplasma environment with a high number density enhances the crystallization process through an H diffusion-induced chemical annealing apart from the thermal effect. The recrystallization process of a-Si film by mesoplasma annealing is demonstrated. (C) 2018 Elsevier B.V. All rights reserved.
KeywordChemical-vapor-deposition High-rate Epitaxy Thermal-conductivity Plasma-jet Si Films Pressure Cvd
Subject AreaCrystallography ; Materials Science ; Physics
Language英语
Document Type期刊论文
Identifierhttp://ir.nimte.ac.cn/handle/174433/16758
Collection2018专题
Recommended Citation
GB/T 7714
Lu, Ziyu,Zhang, Sheng,Sheng, Jiang,et al. Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing[J]. JOURNAL OF CRYSTAL GROWTH,2018,486:142-147.
APA Lu, Ziyu.,Zhang, Sheng.,Sheng, Jiang.,Gao, Pingqi.,Chen, Qixian.,...&Ye, Jichun.(2018).Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing.JOURNAL OF CRYSTAL GROWTH,486,142-147.
MLA Lu, Ziyu,et al."Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing".JOURNAL OF CRYSTAL GROWTH 486(2018):142-147.
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