|Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures|
|Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Bo, Baoxue; Ye, Jichun
|Source Publication||JAPANESE JOURNAL OF APPLIED PHYSICS
|Abstract||We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT: PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices. (C) 2018 The Japan Society of Applied Physics|
; Polymer Science
Li, Junmei,Guo, Wei,Jiang, Jie'an,et al. Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2018,57(3).
Li, Junmei,Guo, Wei,Jiang, Jie'an,Gao, Pingqi,Bo, Baoxue,&Ye, Jichun.(2018).Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures.JAPANESE JOURNAL OF APPLIED PHYSICS,57(3).
Li, Junmei,et al."Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures".JAPANESE JOURNAL OF APPLIED PHYSICS 57.3(2018).
|Files in This Item:||
||There are no files associated with this item.
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.