NIMTE OpenIR  > 2018专题
Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications
Fu, Yang Ming; Wan, Chang Jin; Yu, Fei; Xiao, Hui; Tao, Jian; Guo, Yan Bo; Gao, Wan Tian; Zhu, Li Qiang
2018
Source PublicationADVANCED ELECTRONIC MATERIALS
Volume4Issue:11
AbstractRecently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors are mimicked on the proposed pseudodiode, including paired pulse depression and depression adaptation behaviors. Interestingly, the proposed inhibitory synapse demonstrates low power dissipation as low as approximate to 16 fJ for triggering a postsynaptic current with high signal-to-noise ratio of approximate to 2.2. Moreover, the inhibitory synapse demonstrates zero resting power dissipation. The proposed pseudodiode-based inhibitory artificial synapses may find potential applications in neuromorphic platforms.
KeywordNeural Code Depression
Subject AreaMaterials Science
Language英语
Document Type期刊论文
Identifierhttp://ir.nimte.ac.cn/handle/174433/17052
Collection2018专题
Recommended Citation
GB/T 7714
Fu, Yang Ming,Wan, Chang Jin,Yu, Fei,et al. Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(11).
APA Fu, Yang Ming.,Wan, Chang Jin.,Yu, Fei.,Xiao, Hui.,Tao, Jian.,...&Zhu, Li Qiang.(2018).Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications.ADVANCED ELECTRONIC MATERIALS,4(11).
MLA Fu, Yang Ming,et al."Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications".ADVANCED ELECTRONIC MATERIALS 4.11(2018).
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