KMS Ningbo Institute of Materials Technology &Engineering,CAS
Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications | |
Fu, Yang Ming; Wan, Chang Jin; Yu, Fei; Xiao, Hui; Tao, Jian; Guo, Yan Bo; Gao, Wan Tian; Zhu, Li Qiang | |
2018 | |
发表期刊 | ADVANCED ELECTRONIC MATERIALS
![]() |
卷号 | 4期号:11 |
摘要 | Recently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors are mimicked on the proposed pseudodiode, including paired pulse depression and depression adaptation behaviors. Interestingly, the proposed inhibitory synapse demonstrates low power dissipation as low as approximate to 16 fJ for triggering a postsynaptic current with high signal-to-noise ratio of approximate to 2.2. Moreover, the inhibitory synapse demonstrates zero resting power dissipation. The proposed pseudodiode-based inhibitory artificial synapses may find potential applications in neuromorphic platforms. |
关键词 | Neural Code Depression |
学科领域 | Materials Science |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.nimte.ac.cn/handle/174433/17052 |
专题 | 2018专题 |
推荐引用方式 GB/T 7714 | Fu, Yang Ming,Wan, Chang Jin,Yu, Fei,et al. Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(11). |
APA | Fu, Yang Ming.,Wan, Chang Jin.,Yu, Fei.,Xiao, Hui.,Tao, Jian.,...&Zhu, Li Qiang.(2018).Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications.ADVANCED ELECTRONIC MATERIALS,4(11). |
MLA | Fu, Yang Ming,et al."Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications".ADVANCED ELECTRONIC MATERIALS 4.11(2018). |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论