Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications

NIMTE OpenIR > 2018专题

	Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications
	Fu, Yang Ming; Wan, Chang Jin; Yu, Fei; Xiao, Hui; Tao, Jian; Guo, Yan Bo; Gao, Wan Tian; Zhu, Li Qiang
	2018
发表期刊	ADVANCED ELECTRONIC MATERIALS
卷号	4 期号:11
摘要	Recently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors are mimicked on the proposed pseudodiode, including paired pulse depression and depression adaptation behaviors. Interestingly, the proposed inhibitory synapse demonstrates low power dissipation as low as approximate to 16 fJ for triggering a postsynaptic current with high signal-to-noise ratio of approximate to 2.2. Moreover, the inhibitory synapse demonstrates zero resting power dissipation. The proposed pseudodiode-based inhibitory artificial synapses may find potential applications in neuromorphic platforms.
关键词	Neural Code Depression
学科领域	Materials Science
语种	英语
文献类型	期刊论文
条目标识符	http://ir.nimte.ac.cn/handle/174433/17052
专题	2018专题
推荐引用方式 GB/T 7714	Fu, Yang Ming,Wan, Chang Jin,Yu, Fei,et al. Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(11).
APA	Fu, Yang Ming.,Wan, Chang Jin.,Yu, Fei.,Xiao, Hui.,Tao, Jian.,...&Zhu, Li Qiang.(2018).Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications.ADVANCED ELECTRONIC MATERIALS,4(11).
MLA	Fu, Yang Ming,et al."Electrolyte Gated Oxide Pseudodiode for Inhibitory Synapse Applications".ADVANCED ELECTRONIC MATERIALS 4.11(2018).