NIMTE OpenIR  > 2018专题
Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping
Li, Jiaran; Xu, Jingtao; Wang, Hongxiang; Liu, Guo-Qiang; Tan, Xiaojian; Shao, Hezhu; Hu, Haoyang; Jiang, Jun
2018
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume29Issue:21Pages:18727-18732
AbstractPolycrystalline Sn1-xCuxSe samples have been prepared using hot pressing to study the Cu doping effect on carrier concentration in SnSe. Different from Ag, Cu doping decreases the carrier concentration of SnSe at room temperature. The carrier concentration of Cu doped samples increases obviously with temperature, becomes larger than the pristine sample above 523K, and approaches the values of Na doped SnSe at 773K. The enhanced carrier concentration leads to better electrical conductivity, resulting in higher power factors at high temperatures. Due to carrier optimization by Cu, a peak ZT of 0.66 is achieved in Sn0.98Cu0.02Se at 813K.
KeywordThermal-conductivity Transport-properties Crystals Figure Merit Na Ag
Subject AreaBiochemistry & Molecular Biology ; Chemistry ; Polymer Science
Language英语
Document Type期刊论文
Identifierhttp://ir.nimte.ac.cn/handle/174433/17068
Collection2018专题
Recommended Citation
GB/T 7714
Li, Jiaran,Xu, Jingtao,Wang, Hongxiang,et al. Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(21):18727-18732.
APA Li, Jiaran.,Xu, Jingtao.,Wang, Hongxiang.,Liu, Guo-Qiang.,Tan, Xiaojian.,...&Jiang, Jun.(2018).Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(21),18727-18732.
MLA Li, Jiaran,et al."Enhanced thermoelectric performance in p-type polycrystalline SnSe by Cu doping".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.21(2018):18727-18732.
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