NIMTE OpenIR  > 2018专题
Spin-valve-like magnetoresistance in a Ni-Mn-In thin film
Agarwal, Sandeep; Wang, Baomin; Yang, Huali; Dhanapal, Pravarthana; Shen, Yuan; Wang, Junling; Wang, Hailong; Zhao, Jianhua; Li, Run-Wei
Source PublicationPHYSICAL REVIEW B
AbstractSpin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10-400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 k Omega e. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium.
KeywordGiant Magnetoresistance Magnetic-properties Room-temperature Alloys Antiferromagnet Multilayers
Subject AreaChemistry ; Materials Science ; Physics
Document Type期刊论文
Recommended Citation
GB/T 7714
Agarwal, Sandeep,Wang, Baomin,Yang, Huali,et al. Spin-valve-like magnetoresistance in a Ni-Mn-In thin film[J]. PHYSICAL REVIEW B,2018,97(21).
APA Agarwal, Sandeep.,Wang, Baomin.,Yang, Huali.,Dhanapal, Pravarthana.,Shen, Yuan.,...&Li, Run-Wei.(2018).Spin-valve-like magnetoresistance in a Ni-Mn-In thin film.PHYSICAL REVIEW B,97(21).
MLA Agarwal, Sandeep,et al."Spin-valve-like magnetoresistance in a Ni-Mn-In thin film".PHYSICAL REVIEW B 97.21(2018).
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