NIMTE OpenIR  > 2019专题
Recommended Methods to Study Resistive Switching Devices
Lanza, Mario; Wong, H-S Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan
2019
Source PublicationADVANCED ELECTRONIC MATERIALS
Volume5Issue:1
AbstractRecommended Methods to Study Resistive Switching Devices
KeywordHEXAGONAL BORON-NITRIDE ALIGNED CARBON NANOTUBES SPICE COMPACT MODEL NONVOLATILE MEMORY RRAM DEVICES THIN-FILM DIELECTRIC-BREAKDOWN MEMRISTIVE BEHAVIOR PHYSICAL MODEL NANOSCALE
DOI10.1002/aelm.201800143
Citation statistics
Document Type期刊论文
Identifierhttp://ir.nimte.ac.cn/handle/174433/18674
Collection2019专题
AffiliationLanza, M (reprint author), Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China.
First Author Affilication中国科学院宁波材料技术与工程研究所
Recommended Citation
GB/T 7714
Lanza, Mario,Wong, H-S Philip,Pop, Eric,et al. Recommended Methods to Study Resistive Switching Devices[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(1).
APA Lanza, Mario.,Wong, H-S Philip.,Pop, Eric.,Ielmini, Daniele.,Strukov, Dimitri.,...&Shi, Yuanyuan.(2019).Recommended Methods to Study Resistive Switching Devices.ADVANCED ELECTRONIC MATERIALS,5(1).
MLA Lanza, Mario,et al."Recommended Methods to Study Resistive Switching Devices".ADVANCED ELECTRONIC MATERIALS 5.1(2019).
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