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Memristors based on amorphous ZnSnO films 期刊论文
MATERIALS LETTERS, 2019, 卷号: 249, 页码: 169-172
Authors:  Lu, Bojing;  Lu, Yangdan;  Zhu, Hangjian;  Zhang, Jiaqi;  Yue, Shilu;  Li, Siqin;  Zhuge, Fei;  Ye, Zhizhen;  Lu, Jianguo
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Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fully-transparent thin-film transistors 期刊论文
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 13, 页码: 15883-15891
Authors:  Wu, Weihua;  Liang, Lingyan;  Yu, Jingjing;  Xiao, Xi;  Zhang, Hongliang;  Gao, Junhua;  Zhuge, Fei;  Chang, Ting-Chang;  Lan, Linfeng;  Cao, Hongtao
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METAL-OXIDE-SEMICONDUCTOR  LOW-TEMPERATURE  HIGH-PERFORMANCE  SOL-GEL  GATE DIELECTRICS  HIGH-MOBILITY  LOW-VOLTAGE  ELECTRICAL PERFORMANCE  COMBUSTION SYNTHESIS  WATER  
Memristive Synapses for Brain-Inspired Computing 期刊论文
ADVANCED MATERIALS TECHNOLOGIES, 2019, 卷号: 4, 期号: 3
Authors:  Wang, Jingrui;  Zhuge, Fei
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RESISTIVE-SWITCHING MEMORY  MAGNETIC TUNNEL-JUNCTIONS  LONG-TERM POTENTIATION  PHASE-CHANGE MEMORY  RRAM DEVICES  SYNAPTIC PLASTICITY  CONDUCTANCE LINEARITY  ELECTRONIC SYNAPSES  IMPLEMENTATION  SYSTEM  
低温制备N-Fe共掺杂TiO_2-SiO_2可见光催化复合薄膜 期刊论文
材料科学与工程学报, 2018, 卷号: 36, 期号: 06, 页码: 921-926
Authors:  卜彦强;  马德伟;  宋琨;  曹鸿涛;  吴爱国;  王立平;  陈亮;  金亦君;  徐裕;  张莉;  梁凌燕;  张洪亮;  高俊华;  诸葛飞
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ZnO 自整流忆阻器及其神经突触行为 期刊论文
材料科学与工程学报, 2018, 卷号: 36, 期号: 05, 页码: 726-729+857
Authors:  王洋;  焦雷;  赵飞文;  李惠;  郑秀;  曹鸿涛;  梁凌燕;  张洪亮;  高俊华;  诸葛飞
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ZnO 自整流忆阻器及其神经突触行为 期刊论文
材料科学与工程学报, 2018, 卷号: 36, 期号: 05, 页码: 726-729
Authors:  王洋;  焦雷;  赵飞文;  李惠;  郑秀;  曹鸿涛;  梁凌燕;  张洪亮;  高俊华;  诸葛飞
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忆阻器  自整流  神经突触器件  Zno  
高温处理对ZnO薄膜及其忆阻性能的影响 期刊论文
材料科学与工程学报, 2018, 卷号: 36, 期号: 04, 页码: 564-567
Authors:  胡令祥;  施思齐;  曹鸿涛;  梁凌燕;  张洪亮;  高俊华;  诸葛飞
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忆阻器  高温处理  Zno  无电形成  
Flexible Electrochromic V2O5 Thin Films with Ultrahigh Coloration Efficiency on Graphene Electrodes 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2018, 卷号: 165, 期号: 5, 页码: D183-D189
Authors:  Wu, Jiao;  Qiu, Dong;  Zhang, Hongliang;  Cao, Hongtao;  Wang, Wei;  Liu, Zhaoping;  Tian, Tian;  Liang, Lingyan;  Gao, Junhua;  Zhuge, Fei
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Vanadium-oxide Films  Sol-gel  Ion Batteries  Performance  Thickness  Devices  
一种忆阻器及其应用 专利
专利类型: 发明, 专利号: CN106654009A, 申请日期: 2017-05-10, 公开日期: 2017-05-10
Inventors:  诸葛飞;  胡令祥;  曹鸿涛
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一种钼掺杂的纳米二氧化钛催化剂的制备方法 专利
专利类型: 发明, 专利号: CN106390987A, 申请日期: 2017-02-15, 公开日期: 2017-02-15
Inventors:  诸葛飞;  李振超;  吴爱国;  曾乐勇;  沈折玉;  徐裕;  梁凌燕;  曹鸿涛
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