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Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
Authors:  Huan, Ya-Wei;  Wang, Xing-Lu;  Liu, Wen-Jun;  Dong, Hong;  Long, Shi-Bing;  Sun, Shun-Ming;  Yang, Jian-Guo;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Yu, Hong-Yu;  Lu, Hong-Liang;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:16/0  |  Submit date:2018/12/04
Beta-ga2o3 Single-crystals  Ohmic Contacts  Offsets  Heterostructures  Valence  Growth  Edge  
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
Authors:  Huan, Ya-Wei;  Wang, Xing-Lu;  Liu, Wen-Jun;  Dong, Hong;  Long, Shi-Bing;  Sun, Shun-Ming;  Yang, Jian-Guo;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Yu, Hong-Yu;  Lu, Hong-Liang;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:13/0  |  Submit date:2018/12/04
Beta-ga2o3 Single-crystals  Ohmic Contacts  Offsets  Heterostructures  Valence  Growth  Edge  
Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 期号: 3
Authors:  Sun, Shun-Ming;  Liu, Wen-Jun;  Wang, Yong-Ping;  Huan, Ya-Wei;  Ma, Gan;  Zhu, Bao;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:13/0  |  Submit date:2018/12/04
In2o3  Indium  Films  Heterostructures  Temperature  Valence  Offsets  Gap  
具有高磁感应强度高杂质兼容性的铁基纳米晶合金及利用工业原料制备该合金的方法 专利
专利类型: 发明, 专利号: CN106834930A, 申请日期: 2017-06-13, 公开日期: 2017-06-13
Inventors:  王安定;  常春涛;  刘锦川;  刘涛;  王新敏;  岳士强
Favorite  |  View/Download:7/0  |  Submit date:2018/01/11