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Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
Authors:  Huan, Ya-Wei;  Wang, Xing-Lu;  Liu, Wen-Jun;  Dong, Hong;  Long, Shi-Bing;  Sun, Shun-Ming;  Yang, Jian-Guo;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Yu, Hong-Yu;  Lu, Hong-Liang;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:16/0  |  Submit date:2018/12/04
Beta-ga2o3 Single-crystals  Ohmic Contacts  Offsets  Heterostructures  Valence  Growth  Edge  
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
Authors:  Huan, Ya-Wei;  Wang, Xing-Lu;  Liu, Wen-Jun;  Dong, Hong;  Long, Shi-Bing;  Sun, Shun-Ming;  Yang, Jian-Guo;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Yu, Hong-Yu;  Lu, Hong-Liang;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:13/0  |  Submit date:2018/12/04
Beta-ga2o3 Single-crystals  Ohmic Contacts  Offsets  Heterostructures  Valence  Growth  Edge