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Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
Authors:  Huan, Ya-Wei;  Wang, Xing-Lu;  Liu, Wen-Jun;  Dong, Hong;  Long, Shi-Bing;  Sun, Shun-Ming;  Yang, Jian-Guo;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Yu, Hong-Yu;  Lu, Hong-Liang;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:16/0  |  Submit date:2018/12/04
Beta-ga2o3 Single-crystals  Ohmic Contacts  Offsets  Heterostructures  Valence  Growth  Edge  
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
Authors:  Huan, Ya-Wei;  Wang, Xing-Lu;  Liu, Wen-Jun;  Dong, Hong;  Long, Shi-Bing;  Sun, Shun-Ming;  Yang, Jian-Guo;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Yu, Hong-Yu;  Lu, Hong-Liang;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
Favorite  |  View/Download:13/0  |  Submit date:2018/12/04
Beta-ga2o3 Single-crystals  Ohmic Contacts  Offsets  Heterostructures  Valence  Growth  Edge  
Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 期号: 3
Authors:  Sun, Shun-Ming;  Liu, Wen-Jun;  Wang, Yong-Ping;  Huan, Ya-Wei;  Ma, Gan;  Zhu, Bao;  Wu, Su-Dong;  Yu, Wen-Jie;  Horng, Ray-Hua;  Xia, Chang-Tai;  Sun, Qing-Qing;  Ding, Shi-Jin;  Zhang, David Wei
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In2o3  Indium  Films  Heterostructures  Temperature  Valence  Offsets  Gap  
多晶硅薄膜的制备方法以及光电器件 专利
专利类型: 发明, 专利号: CN106653572A, 申请日期: 2017-05-10, 公开日期: 2017-05-10
Inventors:  芦子玉;  邬苏东;  叶继春;  高平奇;  丁丽
Favorite  |  View/Download:2/0  |  Submit date:2018/01/11
电感耦合等离子体喷枪及等离子体设备 专利
专利类型: 发明, 专利号: CN204614759U, 申请日期: 2015-09-02, 公开日期: 2015-09-02
Inventors:  邬苏东;  叶继春;  高平奇;  杨映虎;  韩灿;  张胜
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衬底温度的控制方法、装置及薄膜沉积设备 专利
专利类型: 发明, 专利号: CN104846346A, 申请日期: 2015-08-19, 公开日期: 2015-08-19
Inventors:  叶继春;  韩灿;  邬苏东;  高平奇;  杨映虎;  张胜
Favorite  |  View/Download:5/0  |  Submit date:2018/01/11
等离子体薄膜沉积装置 专利
专利类型: 发明, 专利号: CN203999809U, 申请日期: 2014-12-10, 公开日期: 2014-12-10, 2014-12-10, 2014-12-10, 2014-12-10
Inventors:  叶继春;  邬苏东;  高平奇;  杨映虎;  韩灿
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